搜搜做题作业网the last one thx you so so so much
来源：学生作业帮 编辑：搜搜做题作业网作业帮 分类：英语作业 时间：2024/04/28 18:51:57
the last one thx you so so so much
by two orders of magnitude.Unfortunately,the poor resistivity of the silicon substrate does not allow the use of very high frequencies.Use of a high resistivity GaAs substrate with a much lower rf loss will make higher microwave fre- quencies feasible with a corresponding increase in sensitiv- ity.We note that oscillators and mixers can be realized up to several GHz on silicon substrates and several tens of GHz on GaAs substrates.It should be possible to fabricate a large array of sensitive detectors monolithically integrated with their associated electronics.
by two orders of magnitude.Unfortunately,the poor resistivity of the silicon substrate does not allow the use of very high frequencies.Use of a high resistivity GaAs substrate with a much lower rf loss will make higher microwave fre- quencies feasible with a corresponding increase in sensitiv- ity.We note that oscillators and mixers can be realized up to several GHz on silicon substrates and several tens of GHz on GaAs substrates.It should be possible to fabricate a large array of sensitive detectors monolithically integrated with their associated electronics.
由二个数量级.不幸地,硅体的粗劣的抵抗力不允许对甚高频的用途.对一个高的抵抗力GaAs 基体的用途以更低的rf 损失将使更高的微波fre- quencies 可行以在sensitiv- 的对应的增量ity .我们注意到,摆动器和搅拌器可能体会由几千兆赫在硅体和几十倍千兆赫决定在GaAs 基体.它应该是可能制造大一些敏感探测器整体地集成以他们伴生的电子.
是这个啦,希望对你有用.
是这个啦,希望对你有用.