英语翻译继续刚才那个哦~都翻译了给个几百分吧,救命之需啊~Fig.2 compares the profiles ass

英语翻译
继续刚才那个哦~都翻译了给个几百分吧,救命之需啊~
Fig.2 compares the profiles assessed at two wavelengths for layers doped with GeO,having nominal widths of 15 pm and doping compositions of 3.5,5.0,and 7.5%.It is evident that in all cases the index transition from the quartz substrate to the layer is not a simple step.Instead,there is a gradual variation within the Ge02-doped layer which increases in index away from the interface.At this time it is not possible to assess if this is merely the result of a stress field caused by changes in lattice parameter or if it results from the conditions within the growing chamber [I].However,it appears that waveguides are fabricated in each case,but the index profile is not simply a step function._-
For comparison with a more familiar example,the present analysis technique was applied to a proton exchanged LiNb03 waveguide produced at GEC Marconi.Fig.3(a) shows the experimental dark mode position measured at 0.488 pm.The triangles give the experimental points within an error of An - f 0.0001.Of the 17 dark lines measured,only six appeared as sharp real modes,the remaining 11 being broader bands referred to as “substrate” modes but still of value in computing the profile.Although the six real modes imply an almost square well profile,since the data in Fig.3(a) are on a straight line,the use of all 17 modes enables a more complete analysis of the index variation.Note that the form of the profile for LiNb03:H differs from that of the epitaxial quartz layer (Fig.1).Fig.3(b).presents the computed index profiles for three alternative functions of the form of the index change with depth.The choices are a simple exponential index variation from the interface layer,an exponential plus a sloping base,and a free profile.All three show an adequate representation of the modes,as assessed by the minimization of the least squares error in the computation.Since the profile is close to a step function the subtle variation between the three would not be apparent in an analysis using only the six “real” (i.e.,bright) modes.However,the computation emphasizes that the index profile resulting from proton exchange includes a steep gradient at the boundary.

这一部分比第一部分更有把握,可以放心
Fig.2 compares the profiles assessed at two wavelengths for layers doped with GeO,having nominal widths of 15 pm and doping compositions of 3.5,5.0,and 7.5%.图2比较了在两个波长下对掺二氧化锗的石英层估计的（折射率）分布,标称宽度为15pm,而掺杂组分为3.5、5.0和7.5.It is evident that in all cases the index transition from the quartz substrate to the layer is not a simple step.Instead,there is a gradual variation within the Ge02-doped layer which increases in index away from the interface.很明显,在所有情况下,折射率从石英衬底过渡到掺杂层并不是简单的一步.相反在二氧化锗掺杂层内存在者逐步的变化,折射率离界面逐步增加.At this time it is not possible to assess if this is merely the result of a stress field caused by changes in lattice parameter or if it results from the conditions within the growing chamber [I].这时,不可能估计这是不是只是由晶格参数的变化引起的应力场的结果,或者这是否是由于生长室内的条件引起的结果.However,it appears that waveguides are fabricated in each case,but the index profile is not simply a step function.可是似乎波导是在每一种情况下制造的,而折射率分布并并不只是一个阶跃函数._-
For comparison with a more familiar example,the present analysis technique was applied to a proton exchanged LiNb03 waveguide produced at GEC Marconi.为了与一个比较类似的例子比较,本分析技术被用于了在GEC Marconi公司生产的质子交换LiNbO3波导.Fig.3(a) shows the experimental dark mode position measured at 0.488 pm.The triangles give the experimental points within an error of An - f 0.0001.Of the 17 dark lines measured,only six appeared as sharp real modes,the remaining 11 being broader bands referred to as “substrate” modes but still of value in computing the profile.图3（a）示出了在0.488 pm处测得的实验的暗模式位置.三角形给出了一些实验点,误差在……以内.在测得的17条暗线中,只有6条显示为陡的实际模式,其余11条都是宽的带,称为“衬底”模式,但在计算分布中仍有价值.Although the six real modes imply an almost square well profile,since the data in Fig.3(a) are on a straight line,the use of all 17 modes enables a more complete analysis of the index variation.虽然六个实际模式意味着几乎方形的势阱分布,由于图3（a）中的数据是在直线上,所以采用全部17个模式让我们能更完全的分析折射率的变化.Note that the form of the profile for LiNb03:H differs from that of the epitaxial quartz layer (Fig.1).Fig.3(b).presents the computed index profiles for three alternative functions of the form of the index change with depth.请注意,LiNb03的折射率分布的形式：H不同于外延生长石英层的分布（图1）.图3（b）表示折射率随深度而变化的形式的三种交替函数计算的折射率分布.The choices are a simple exponential index variation from the interface layer,an exponential plus a sloping base,and a free profile.其选择是来自界面层的简单的指数折射率变化,一个指数加倾斜的基底和一个自由的分布.All three show an adequate representation of the modes,as assessed by the minimization of the least squares error in the computation.所有三种选择都表明能适当代表模式,就像在计算中通过最小二乘误差最小化而估算的那样.Since the profile is close to a step function the subtle variation between the three would not be apparent in an analysis using only the six “real” (i.e.,bright) modes.However,the computation emphasizes that the index profile resulting from proton exchange includes a steep gradient at the boundary.由于分布接近于阶跃函数,所以三者之间的精细变化在只用6个“实际”（即亮的）模式进行的分析中将不很明显.然而计算强调了,由质子交换导致的折射率分布在边界处包含很陡的梯度